Products
Manufacturer
RFQ
NEWS
ContactIRLIB9343PBF
IRLIB9343PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLIB9343PBF
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 6037
- Description: IRLIB9343PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 93MOhm |
| Additional Feature | HIGH RELIABILITY |
| Voltage - Rated DC | -55V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | -14A |
| Number of Elements | 1 |
| Power Dissipation-Max | 33W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 33W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 9.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 105m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 14A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
| Rise Time | 24ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.5 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | -14A |
| Threshold Voltage | -1V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Dual Supply Voltage | -55V |
| Nominal Vgs | -1 V |
| Height | 9.8mm |
| Length | 10.6172mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLIB9343PBF Description
This Digital Audio HEXFET? is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 °C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
IRLIB9343PBF Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175 °C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Lead-Free
IRLIB9343PBF Applications
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
