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ContactIRLHM630TR2PBF
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3.5m Ω @ 20A, 4.5V 3170pF @ 25V 62nC @ 4.5V 8-VQFN Exposed Pad
- Manufacturer: Infineon Technologies
- NO: 376-IRLHM630TR2PBF
- Package: 8-VQFN Exposed Pad
- Datasheet:
- Stock: 16940
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3.5m Ω @ 20A, 4.5V 3170pF @ 25V 62nC @ 4.5V 8-VQFN Exposed Pad (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Series | HEXFET® |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation | 37W |
| Turn On Delay Time | 9.1 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 4.5V |
| Rise Time | 32ns |
| Fall Time (Typ) | 43 ns |
| Turn-Off Delay Time | 65 ns |
| Continuous Drain Current (ID) | 21A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 30V |
| Recovery Time | 30 ns |
| Nominal Vgs | 800 mV |
| Height | 990.6μm |
| Length | 3.2766mm |
| Width | 3.3mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
