IRLHM620TR2PBF

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.5mOhm @ 20A, 4.5V 3620pF @ 10V 78nC @ 4.5V 20V 8-VQFN Exposed Pad


  • Manufacturer: Infineon Technologies
  • NO: 376-IRLHM620TR2PBF
  • Package: 8-VQFN Exposed Pad
  • Datasheet: pdf
  • Stock: 528
  • Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.5mOhm @ 20A, 4.5V 3620pF @ 10V 78nC @ 4.5V 20V 8-VQFN Exposed Pad (Kg)

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SPECIFICATIONS

Parameters
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Supplier Device Package PQFN (3x3)
Packaging Cut Tape (CT)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.7W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation 2.7W
Turn On Delay Time 7.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3620pF @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 3.62nF
Recovery Time 62 ns
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 1.8mOhm
Rds On Max 2.5 mΩ
Nominal Vgs 800 mV
Height 900μm
Length 3.2766mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount

In Stock

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