Products
Manufacturer
RFQ
NEWS
ContactIRLH6224TR2PBF
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3mOhm @ 20A, 4.5V 3710pF @ 10V 86nC @ 10V 20V 8-PowerTDFN
- Manufacturer: Infineon Technologies
- NO: 376-IRLH6224TR2PBF
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 6438
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3mOhm @ 20A, 4.5V 3710pF @ 10V 86nC @ 10V 20V 8-PowerTDFN (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 9.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3710pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 28A Ta 105A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Rise Time | 23ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 36 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 28A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 3.71nF |
| Recovery Time | 57 ns |
| Drain to Source Resistance | 3mOhm |
| Rds On Max | 3 mΩ |
| Nominal Vgs | 800 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 3MOhm |
| Max Operating Temperature | 150°C |
