IRLH5034TR2PBF

MOSFET N-CH 40V 100A 5X6 PQFN


  • Manufacturer: Infineon Technologies
  • NO: 376-IRLH5034TR2PBF
  • Package: 8-PowerVDFN
  • Datasheet: pdf
  • Stock: 5479
  • Description: MOSFET N-CH 40V 100A 5X6 PQFN(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 156W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 54ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.73nF
Recovery Time 38 ns
Drain to Source Resistance 2.7mOhm
Rds On Max 2.4 mΩ
Nominal Vgs 1 V
Height 810μm
Length 5mm
Width 5.1562mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.