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IRLB4030PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLB4030PBF
- Package: TO-220-3
- Datasheet:
- Stock: 4074
- Description: IRLB4030PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 110 ns |
| Continuous Drain Current (ID) | 180A |
| Threshold Voltage | 2.5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Nominal Vgs | 2.5 V |
| Height | 15.24mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 4.3MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 370W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 370W |
| Turn On Delay Time | 74 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.3m Ω @ 110A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11360pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 4.5V |
| Rise Time | 330ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
IRLB4030PBF Description
IRLB4030PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. It is designed based on advanced HEXFET? power MOSFET technology and is optimized for a logic-level drive. Due to its improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, and enhanced body diode dV/dt and dI/dt capability, power MOSFET IRLB4030PBF is well suited for high-speed power switching, uninterruptible power supplies, and synchronous rectification.
IRLB4030PBF Features
Optimized for logic level drive
Very low RDS(ON) at 4.5V VGS
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
IRLB4030PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard-switched and high-frequency circuits
