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ContactIRLB3813PBF
IRLB3813PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLB3813PBF
- Package: TO-220-3
- Datasheet:
- Stock: 7358
- Description: IRLB3813PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 1.95MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 36 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.95m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8420pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 260A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 4.5V |
| Rise Time | 170ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 260A |
| Threshold Voltage | 1.9V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 120A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 1050A |
| Dual Supply Voltage | 30V |
| Avalanche Energy Rating (Eas) | 520 mJ |
| Recovery Time | 36 ns |
| Nominal Vgs | 1.9 V |
| Height | 9.02mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLB3813PBF Description
IRLB3813PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies based on advanced HEXFET? power MOSFET technology. Due to its low on-state resistance, fast switching speed, and high avalanche ruggedness, power MOSFET IRLB3813PBF is well suited for UPS/Inverter, power tools, and isolated DC-DC converters.
IRLB3813PBF Features
Low on-state resistance
Fast switching speed
High avalanche ruggedness
Available in the TO-220AB package
Advanced HEXFET? power MOSFET technology
IRLB3813PBF Applications
UPS/Inverter
Power tools
Isolated DC-DC converters
