IRLB3034PBF

IRLB3034PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRLB3034PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 7566
  • Description: IRLB3034PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.7MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 65 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V
Rise Time 827ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 355 ns
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 255 mJ
Max Junction Temperature (Tj) 175°C
Height 19.8mm
Length 10.5156mm
Width 4.699mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLB3034PBF Description


IRLB3034PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies based on advanced HEXFET? power MOSFET technology. Due to its low on-state resistance, fast switching speed, and high avalanche ruggedness, power MOSFET IRLB3034PBF is well suited for uninterruptible power supplies and synchronous rectification. 



IRLB3034PBF Features


  • Low gate charge

  • Low on-state resistance

  • Fast switching speed

  • High avalanche ruggedness

  • Available in the TO-220 package



IRLB3034PBF Applications


  • DC Motor Drive

  • High-speed power switching

  • Uninterruptible power supplies

  • Synchronous rectification in SMPS

  • Hard switched and High-frequency circuits


In Stock

Please send RFQ , we will respond immediately.