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IRL60HS118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL60HS118
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 8154
- Description: IRL60HS118 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 11.5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | 18.5A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 56A |
| Avalanche Energy Rating (Eas) | 22 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 1mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-TSDSON-6 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
IRL60HS118 Description
IRL60HS118 is a new type of logic level power MOSFET manufactured by Infineon Technologies based on the OptiMOS?5 chip. It is able to provide higher power density, higher switching frequency, and improved efficiency, making it well suited for a wide range of applications including wireless charging, telecom, adapter, etc. Power MOSFET IRL60HS118 is available in the space-saving PQFN 2x2 package.
IRL60HS118 Features
Higher power density
Higher switching frequency
Improved efficiency
Higher power density designs
Available in the PQFN 2mm x 2mm package
IRL60HS118 Applications
Adapter
Telecom
Wireless charging
