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MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 42mOhm @ 12A, 4.5V ±8V 1460pF @ 15V 44nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Infineon Technologies
- NO: 376-IRL5602STRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 35581
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 42mOhm @ 12A, 4.5V ±8V 1460pF @ 15V 44nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | D2PAK |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 1999 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 62mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 75W Tc |
| Element Configuration | Single |
| Power Dissipation | 75W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1460pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
| Rise Time | 73ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 84 ns |
| Turn-Off Delay Time | 53 ns |
| Continuous Drain Current (ID) | -24A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | 20V |
| Input Capacitance | 1.46nF |
| Drain to Source Resistance | 42mOhm |
| Rds On Max | 42 mΩ |
| Nominal Vgs | 1 V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
