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ContactIRL540NSTRLPBF
IRL540NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL540NSTRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 7407
- Description: IRL540NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 36A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Recovery Time | 290 ns |
| Nominal Vgs | 2 V |
| Height | 4.826mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 44mOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 36A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.8W Ta 140W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 44m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 36A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 5V |
| Rise Time | 81ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 62 ns |
| Turn-Off Delay Time | 39 ns |
FQP20N06 Description
Intemational Rectifier's Fifth Generation HEXFETs employ cutting-edge processing methods to provide incredibly low on-resistanee per silicon area. This feature, along with the quick switching speed and ruggedized device architecture that are well-known characteristics of HEXFET Power MOSFETs, gives the designer access to a very sophisticated and dependable device for usage in a range of applications. A surface mount power package called the D2Pak can support d-sizes up to HEX-4. It has the lowest on-resistance and maximum power capability of any surface mount package currently available. Due to its low internal connection resistance and ability to dissipate up to 2.0W in a typical surface mount application, the D2Pak is appropriate for high current applications.
FQP20N06 Features
Technology for Advanced Processes
Mount Surface (IRL540NS)
Through-hole with a low profile (IRL540NL)
Operating Temperature: 175 °C
FQP20N06 Applications
Switching applications
