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IRL530NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL530NPBF
- Package: TO-220-3
- Datasheet:
- Stock: 8364
- Description: IRL530NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Terminal Finish | MATTE TIN OVER NICKEL |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 17A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 79W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 79W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 5V |
| Rise Time | 53ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 26 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 17A |
| Threshold Voltage | 2V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Dual Supply Voltage | 100V |
| Recovery Time | 210 ns |
| Nominal Vgs | 2 V |
| Height | 8.77mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRL530NPBF Description
The IRL530NPBF is a 100V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRL530NPBF is in the TO-220-3 package with 79W power dissipation.
IRL530NPBF Features
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current rating
IRL530NPBF Applications
DC motors
Inverters
SMPS
Lighting
Load switches
Battery-powered applications
