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IRL2203NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL2203NSTRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 6590
- Description: IRL2203NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 7MOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 116A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.8W Ta 180W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 170W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 116A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V |
| Rise Time | 160ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 66 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 116A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Dual Supply Voltage | 30V |
| Avalanche Energy Rating (Eas) | 290 mJ |
| Recovery Time | 84 ns |
| Nominal Vgs | 3 V |
| Height | 4.572mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRL2203NSTRLPBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 290 mJ.The maximum input capacitance of this device is 3290pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.This device conducts a continuous drain current (ID) of 116A, which is the maximum continuous current transistor can conduct.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.There is no drain current on this device since the maximum continuous current it can conduct is 75A.When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRL2203NSTRLPBF Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 116A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
a threshold voltage of 3V
IRL2203NSTRLPBF Applications
There are a lot of Infineon Technologies IRL2203NSTRLPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Uninterruptible Power Supply
- Load switching
- Solar Inverter
- Motor control
- DC-to-DC converters
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Consumer Appliances
- Battery Protection Circuit
- Lighting, Server, Telecom and UPS.
