IRL1404PBF

IRL1404PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRL1404PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 4106
  • Description: IRL1404PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Fall Time (Typ) 37 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 160A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 620 mJ
Recovery Time 94 ns
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 160A
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 4.3V 10V
Vgs (Max) ±20V

IRL1404PBF Description


The IRL1404PBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.



IRL1404PBF Features


  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRL1404PBF Applications


  • manufacturing

  • food processing or storage

  • chemical

  • Industrial

  • Power Management


In Stock

Please send RFQ , we will respond immediately.