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IRL1004PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL1004PBF
- Package: TO-220-3
- Datasheet:
- Stock: 1338
- Description: IRL1004PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 6.5mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 40V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 130A |
| Number of Elements | 1 |
| Power Dissipation-Max | 200W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.5m Ω @ 78A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5330pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 130A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 4.5V |
| Rise Time | 210ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 130A |
| Threshold Voltage | 1V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 520A |
| Dual Supply Voltage | 40V |
| Avalanche Energy Rating (Eas) | 700 mJ |
| Nominal Vgs | 1 V |
| Height | 8.77mm |
| Length | 10.6426mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRL1004PBF Description
The IRL1004PBF is a fifth-generation N-channel Power MOSFET from the HEXFET? brand that uses cutting-edge manufacturing methods to achieve the lowest possible ON-resistance per silicon area—combining this advantage with the quick switching time and ruggedized device design results in very efficient and dependable functioning. At power dissipation levels of up to 50W, the package is overwhelmingly favored for all commercial and industrial applications.
IRL1004PBF Features
Logic level gate drive
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
IRL1004PBF Applications
Commercial
Industrial
Power Management
