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IRFU220NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFU220NPBF
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 8775
- Description: IRFU220NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 600Ohm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 43W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 43W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Dual Supply Voltage | 200V |
| Avalanche Energy Rating (Eas) | 46 mJ |
| Recovery Time | 140 ns |
| Nominal Vgs | 4 V |
| Height | 6.22mm |
| Length | 6.7056mm |
| Width | 2.3876mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRFU220NPBF Description
The IRFU220NPBF is a HEXFET? single N-channel Power MOSFET offering a low gate-to-drain charge to reduce switching losses. The Infineon IRFU220NPBF is suitable for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRFU220NPBF is in the TO-251-3 package with 43W power dissipation.
IRFU220NPBF Features
Fully characterized capacitance including effective COSS to simplify the design
Fully characterized avalanche voltage and current
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
IRFU220NPBF Applications
cellular phones
laptop computers
photovoltaic systems
wind turbines
shunt voltage regulator and the series voltage regulator
