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MOSFET (Metal Oxide) N-Channel Tube 48mOhm @ 26A, 10V ±30V 4560pF @ 25V 110nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA
- Manufacturer: Infineon Technologies
- NO: 376-IRFSL4229PBF
- Package: TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet:
- Stock: 2653
- Description: MOSFET (Metal Oxide) N-Channel Tube 48mOhm @ 26A, 10V ±30V 4560pF @ 25V 110nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA (Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Supplier Device Package | TO-262 |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Series | HEXFET® |
| Published | 2010 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 330W Tc |
| Element Configuration | Single |
| Power Dissipation | 330W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4560pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 45A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 31ns |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 21 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 45A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 250V |
| Input Capacitance | 4.56nF |
| Drain to Source Resistance | 48mOhm |
| Rds On Max | 48 mΩ |
| Height | 9.65mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
