IRFS7437PBF

IRFS7437PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFS7437PBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 167
  • Description: IRFS7437PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®, StrongIRFET™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 802 mJ
Recovery Time 30 ns
Nominal Vgs 3 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFS7437PBF Description


IRFS7437PBF is a kind of HEXFET? power MOSFET developed by Infineon Technologies. This electronic device features an improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, as well as enhanced body diode dV/dt and dI/dt capability. Based on its specific characteristics, it is well suited for a wide range of applications, including battery-powered circuits, synchronous rectifier applications, DC/DC and AC/DC converters, and more.



IRFS7437PBF Features


  • Improved gate, avalanche, and dynamic dV/dt ruggedness

  • Fully characterized capacitance and avalanche SOA

  • Enhanced body diode dV/dt and dI/dt capability

  • Available in the D2Pak package



IRFS7437PBF Applications


  • Battery-powered circuits

  • Synchronous rectifier applications

  • DC/DC and AC/DC converters

  • Half-bridge and full-bridge topologies

  • Motor drive applications


In Stock

Please send RFQ , we will respond immediately.