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IRFR825PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFR825PBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 3611
- Description: IRFR825PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 119W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 119W |
| Turn On Delay Time | 8.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.3 Ω @ 3.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1346pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 6A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 500V |
| Recovery Time | 138 ns |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRFR825PBF Description
IRFR825PBF is a 500V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The IRFR825PBF MOSFET is mounted in the way of a surface mount. It is suitable to operate the IRFR825PBF at the temperature range from
-55°C to 150°C. The IRFR825PBF belongs to FET General Purpose Power.
IRFR825PBF Features
A higher gate voltage threshold offers improved noise immunity.
Lower gate charge results in more specific driver requirements.
Fast body diode eliminates the need for external diodes in ZVS applications
IRFR825PBF Applications
Zero Voltage Switching SMPS
Motor Control applications
Uninterruptible Power Supplies
