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IRFR7746PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFR7746PBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2884
- Description: IRFR7746PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount, Through Hole |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 99W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 7.9 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 11.2m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3107pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 75V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 21 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 56A |
| Threshold Voltage | 3.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRFR7746PBF Description
The Infineon Technologies IRFR7746PBF is a 75V Single N-Channel HEXFET Power MOSFET in a D-PAK package
IRFR7746PBF Features
Optimized for the broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate-drive voltage (called normal level)
Silicon optimized for applications switching below <100 KHz
Softer body diode compared to previous silicon generation
Industry-standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave soldered
IRFR7746PBF Applications
Brushed motor drive applications
BLDC motor drive applications
Battery-powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
