IRFR7446TRPBF

IRFR7446TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFR7446TRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 8808
  • Description: IRFR7446TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Turn On Delay Time 9.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 520A
DS Breakdown Voltage-Min 40V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®, StrongIRFET™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 98W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN

IRFR7446TRPBF Overview


A device's maximum input capacitance is 3150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 32 ns.As far as peak drain current is concerned, its maximum pulsed current is 520A.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.3V is the threshold voltage at which an electrical device activates any of its operations.A normal operation of the DS requires keeping the breakdown voltage above 40V.To operate this transistor, you will need a 40V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

IRFR7446TRPBF Features


a continuous drain current (ID) of 56A
the turn-off delay time is 32 ns
based on its rated peak drain current 520A.
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)

IRFR7446TRPBF Applications


There are a lot of Infineon Technologies IRFR7446TRPBF applications of single MOSFETs transistors.

  • Load switching
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • General Purpose Interfacing Switch
  • Consumer Appliances
  • Motor control
  • LCD/LED/ PDP TV Lighting
  • Solar Inverter
  • Lighting, Server, Telecom and UPS.

In Stock

Please send RFQ , we will respond immediately.