Products
Manufacturer
RFQ
NEWS
ContactIRFR3710ZTRPBF
IRFR3710ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFR3710ZTRPBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 855
- Description: IRFR3710ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
Qty
Unit Price
Ext Price
-
10
$3.71
$37.13
-
100
$3.50
$350.30
-
500
$3.30
$1,652.35
-
1000
$3.12
$3,117.60
Not the price you want? Send RFQ Now and we'll contact you ASAP.
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Length | 6.1976mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Contact Plating | Tin |
| Current Rating | 42A |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| REACH SVHC | No SVHC |
| Height | 2.52mm |
| Width | 6.22mm |
| Resistance | 18MOhm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C TJ |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| JEDEC-95 Code | TO-252AA |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 140W |
| Turn On Delay Time | 14 ns |
| Threshold Voltage | 4V |
| Power Dissipation-Max | 140W Tc |
| Recovery Time | 53 ns |
| Continuous Drain Current (ID) | 42A |
| Max Junction Temperature (Tj) | 175°C |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 53 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Rise Time | 43ns |
| Fall Time (Typ) | 42 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Nominal Vgs | 2 V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Pulsed Drain Current-Max (IDM) | 220A |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 12 Weeks |
IRFR3710ZTRPBF Description
IRFR3710ZTRPBF is a 100V HEXFET? Power MOSFET. This HEXFET? Power MOSFET IRFR3710ZTRPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRFR3710ZTRPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to T jmax
Multiple Package Options
Lead-Free
IRFR3710ZTRPBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
