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MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 30A, 10V ±20V 1440pF @ 25V 51nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Infineon Technologies
- NO: 376-IRFR2607ZPBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5156
- Description: MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 30A, 10V ±20V 1440pF @ 25V 51nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 22MOhm |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 42A |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Power Dissipation | 110W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Rise Time | 59ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 42A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Dual Supply Voltage | 75V |
| Nominal Vgs | 2 V |
| Height | 2.2606mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRFR2607ZPBF Overview
The maximum input capacitance of this device is 1440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR2607ZPBF Features
a continuous drain current (ID) of 42A
the turn-off delay time is 39 ns
a threshold voltage of 4V
IRFR2607ZPBF Applications
There are a lot of Infineon Technologies IRFR2607ZPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- LCD/LED TV
- Solar Inverter
- AC-DC Power Supply
- DC/DC converters
- Motor Drives and Uninterruptible Power Supples
- Lighting, Server, Telecom and UPS.
- Battery Protection Circuit
- Consumer Appliances
- Load switching
