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ContactIRFR13N20DTRPBF
IRFR13N20DTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFR13N20DTRPBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4762
- Description: IRFR13N20DTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 235mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 13A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 235m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 13A |
| Threshold Voltage | 5.5V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 52A |
| Dual Supply Voltage | 200V |
| Recovery Time | 210 ns |
| Nominal Vgs | 5.5 V |
| Height | 2.3876mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRFR13N20DTRPBF Description
IRFR13N20DTRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFR13N20DTRPBF is -55°C~175°C TJ and its maximum power dissipation is 110W Tc. IRFR13N20DTRPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.
IRFR13N20DTRPBF Features
Drain to Source Breakdown Voltage: 200V
JEDEC-95 Code: TO-252AA
Rds On (Max) @ Id, Vgs: 235m Ω @ 8A, 10V
JESD-30 Code: R-PSSO-G2
IRFR13N20DTRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
