IRFP4321PBF

IRFP4321PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFP4321PBF
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 4294
  • Description: IRFP4321PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15.5mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 78A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Input Capacitance 4.46nF
Recovery Time 130 ns
Drain to Source Resistance 15.5mOhm
Rds On Max 15.5 mΩ
Nominal Vgs 5 V
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 15.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating 78A
Power Dissipation-Max 310W Tc
Element Configuration Single
Power Dissipation 310mW
Turn On Delay Time 18 ns

IRFP4321PBF Description 


The Infineon Technologies IRFP4321PBF HEXFET Power MOSFET  features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency. 



IRFP4321PBF Features


  • Low RDS(ON) Reduces Losses

  • Low Gate Charge Improves the Switching Performance

  • Improved Diode Recovery Improves Switching & EMI Performance 

  • 30V Gate Voltage Rating Improves Robustness

  • Fully Characterized Avalanche SOA



IRFP4321PBF Applications


  • Uninterruptible Power Supply

  • Hard Switched and High-Frequency Circuits

  • Motion Control Applications

  • High-Efficiency Synchronous Rectification in SMPS

In Stock

Please send RFQ , we will respond immediately.