IRFP4310ZPBF

MOSFET (Metal Oxide) N-Channel Bulk 6m Ω @ 75A, 10V ±20V 6860pF @ 50V 170nC @ 10V TO-247-3


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFP4310ZPBF
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 5136
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 6m Ω @ 75A, 10V ±20V 6860pF @ 50V 170nC @ 10V TO-247-3 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2004
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 280W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 280W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 134A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 560A
Dual Supply Voltage 100V
Recovery Time 40 ns
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFP4310ZPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6860pF @ 50V.The drain current is the maximum continuous current the device can conduct, and this device has 134A continuous drain current (ID).At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 560A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFP4310ZPBF Features


a continuous drain current (ID) of 134A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 560A.
a threshold voltage of 4V

IRFP4310ZPBF Applications


There are a lot of Infineon Technologies IRFP4310ZPBF applications of single MOSFETs transistors.

  • General Purpose Interfacing Switch
  • Load switching
  • DC-to-DC converters
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Micro Solar Inverter
  • LCD/LED/ PDP TV Lighting
  • Solar Inverter
  • Lighting
  • Power Management Functions
  • LCD/LED TV

In Stock

Please send RFQ , we will respond immediately.