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IRFP4229PBF
  • IRFP4229PBF

IRFP4229PBF

IRFP4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFP4229PBF
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 5431
  • Description: IRFP4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Recovery Time 290 ns
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 46MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310mW
Case Connection DRAIN

IRFP4229PBF Description

The IRFP4229PBF is a HEXFET? single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery, and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175??C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust, and reliable device for PDP driving applications. IRFP4229PBF is an N-channel PDP switch HEXFET? power MOSFET designed specifically for sustain, energy recovery, and pass switch applications in plasma displays.

Using the latest processing techniques, it achieves low ON-resistance per silicon area and low EPULSE ratings. The IRFP4229PBF MOSFET also has a high repetitive peak current capability and a junction temperature of 175??C. The IRFP4229PBF is highly efficient, robust, and reliable for PDP driving applications due to these factors.


IRFP4229PBF Features

  • High-current rating

  • Industry-standard through-hole power package

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard


IRFP4229PBF Applications

  • UPS

  • SMPS

  • DC motor drives

  • Solar power inverter

  • Power Management

  • Consumer Electronics


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