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IRFP4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFP4110PBF
- Package: TO-247-3
- Datasheet:
- Stock: 5683
- Description: IRFP4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 4.5MOhm |
| Terminal Finish | MATTE TIN OVER NICKEL |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 250 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 370W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 370W |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9620pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
| Rise Time | 67ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 88 ns |
| Turn-Off Delay Time | 78 ns |
| Continuous Drain Current (ID) | 180A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 670A |
| Dual Supply Voltage | 100V |
| Recovery Time | 75 ns |
| Nominal Vgs | 4 V |
| Height | 20.7mm |
| Length | 15.87mm |
IRFP4110PBF Description
IRFP4110PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IRFP4110PBF is -55°C~175°C TJ and its maximum power dissipation is 370W Tc. IRFP4110PBF has 3 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRFP4110PBF is 100V.
IRFP4110PBF Features
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4110PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
