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MOSFET (Metal Oxide) N-Channel Bulk 2.8m Ω @ 76A, 10V ±20V 8250pF @ 25V 209nC @ 10V TO-247-3
- Manufacturer: Infineon Technologies
- NO: 376-IRFP3703PBF
- Package: TO-247-3
- Datasheet:
- Stock: 6980
- Description: MOSFET (Metal Oxide) N-Channel Bulk 2.8m Ω @ 76A, 10V ±20V 8250pF @ 25V 209nC @ 10V TO-247-3 (Kg)
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| Parameters | |
|---|---|
| Recovery Time | 120 ns |
| Nominal Vgs | 4 V |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 210A |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.8W Ta 230W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 76A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 210A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 209nC @ 10V |
| Rise Time | 123ns |
| Drive Voltage (Max Rds On,Min Rds On) | 7V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 24 ns |
| Turn-Off Delay Time | 53 ns |
| Continuous Drain Current (ID) | 210A |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 90A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
IRFP3703PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 210A.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As shown in the table below, the drain current of this device is 90A.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Using drive voltage (7V 10V), this device contributes to a reduction in overall power consumption.
IRFP3703PBF Features
a continuous drain current (ID) of 210A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 53 ns
IRFP3703PBF Applications
There are a lot of Infineon Technologies IRFP3703PBF applications of single MOSFETs transistors.
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Power Management Functions
- Micro Solar Inverter
- PFC stages, hard switching PWM stages and resonant switching
- Motor control
- Server power supplies
- Lighting
- LCD/LED/ PDP TV Lighting
- AC-DC Power Supply
- DC-to-DC converters
