Products
Manufacturer
RFQ
NEWS
ContactIRFP3306PBF
IRFP3306PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFP3306PBF
- Package: TO-247-3
- Datasheet:
- Stock: 8830
- Description: IRFP3306PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 4.2MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 220W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 220W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.2m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4520pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Rise Time | 76ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 77 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 160A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 620A |
| Recovery Time | 31 ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The IRFP3306PBF is an N-channel HEXFET? Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It can be used in SMPS, hard switched, and high-frequency circuits for high-efficiency synchronous rectification. N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of field-effect transistor that belongs to the field-effect transistors category (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).
Features
● Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
● Avalanche SOA and fully characterized capacitance
● Enhanced dV/dt and dI/dt capability of body diodes
● Lead-Free
● Have a higher mobility
Applications
● Synchronous Rectification with High Efficiency in SMPS
● Uninterruptible Power Supply
● Power Switching at High Speed
● Circuits with Hard Switches and High Frequencies
● Power Management
● Industrial
