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IRFP2907PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFP2907PBF
- Package: TO-247-3
- Datasheet:
- Stock: 1641
- Description: IRFP2907PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 4.5MOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 209A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 470W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 470W |
| Case Connection | DRAIN |
| Turn On Delay Time | 23 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 125A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 209A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 620nC @ 10V |
| Rise Time | 190ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 130 ns |
| Turn-Off Delay Time | 130 ns |
| Continuous Drain Current (ID) | 209A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 90A |
| Drain to Source Breakdown Voltage | 75V |
| Pulsed Drain Current-Max (IDM) | 840A |
| Dual Supply Voltage | 75V |
| Recovery Time | 210 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 4 V |
| Height | 24.99mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRFP2907PBF Description
This HEXFET power MOSFET IRFP2907PBF strip plane design uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the HEXFET power MOSFET include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these advantages makes the design an extremely efficient and reliable device used in a variety of applications.
IRFP2907PBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Lead-free
IRFP2907PBF Applications
Telecom applications requiring soft star
