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MOSFET (Metal Oxide) N-Channel Bulk 40m Ω @ 28A, 10V ±20V 4057pF @ 25V 234nC @ 10V TO-247-3
- Manufacturer: Infineon Technologies
- NO: 376-IRFP260NPBF
- Package: TO-247-3
- Datasheet:
- Stock: 5708
- Description: MOSFET (Metal Oxide) N-Channel Bulk 40m Ω @ 28A, 10V ±20V 4057pF @ 25V 234nC @ 10V TO-247-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 40mOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 50A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4057pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 234nC @ 10V |
| Rise Time | 60ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 48 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 50A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Dual Supply Voltage | 200V |
| Avalanche Energy Rating (Eas) | 560 mJ |
| Recovery Time | 402 ns |
| Nominal Vgs | 4 V |
| Height | 20.2946mm |
| Length | 15.875mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRFP260NPBF Description
The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. The IRFP260NPBF features extremely low on-resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements, and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.
IRFP260NPBF Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
IRFP260NPBF Applications
DC motors
Inverters
SMPS
Lighting
Load switches
Battery-powered applications
