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IRFP150NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFP150NPBF
- Package: TO-247-3
- Datasheet:
- Stock: 4756
- Description: IRFP150NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 36mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 42A |
| Lead Pitch | 5.45mm |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 160W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 140W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 36m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 56ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 42A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Avalanche Energy Rating (Eas) | 420 mJ |
| Recovery Time | 270 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 4 V |
| Height | 24.99mm |
| Length | 15.875mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRFP150NPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier T0-218 package because of its isolated mounting hole.
IRFP150NPBF Features
Advanced Process Technology
Dynamic dv/dt Rating
175 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
ROHS3 Compliant
No SVHC
Contains Lead, Lead Free
IRFP150NPBF Applications
Switching Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
