IRFI4110GPBF

IRFI4110GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFI4110GPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 8242
  • Description: IRFI4110GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 4.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 61W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 61W
Case Connection ISOLATED
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9540pF @ 50V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 71 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 72A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 290A
Nominal Vgs 4 V
Height 16.13mm
Length 10.75mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
IRFI4110GPBF Description


IRFI4110GPBF is a kind of power MOSFET for high power range applications with high switching speed. It has a wide safe operating area without hot spots, and has a positive temperature coefficient of resistance, making it suitable for parallel use. When the ambient noise is high, a transistor with a higher threshold voltage can be selected to improve the anti-interference ability; on the contrary, when the noise is low, a transistor with a lower threshold voltage can be selected to reduce the required input drive signal voltage. It brings great convenience to circuit design. Because it is a voltage-controlled device and has a high input impedance, its driving power is very small, and the requirements for the driving circuit are low. Due to these obvious advantages, IRFI4110GPBF are widely used in various fields such as motor speed regulation and switching power supply.


IRFI4110GPBF Features


Fast switching speed
Strong overload capability
High input impedance and low driving rate
Available in the TO-220 Full-Pak package
Operating junction temperature of -55 to + 175 °C


IRFI4110GPBF Applications


Synchronous rectification
Uninterruptible power supply
High-speed switching
Hard-switched circuits

In Stock

Please send RFQ , we will respond immediately.