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ContactIRFHM9331TR2PBF
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 10mOhm @ 11A, 20V 1543pF @ 25V 48nC @ 10V 30V 8-PowerTDFN
- Manufacturer: Infineon Technologies
- NO: 376-IRFHM9331TR2PBF
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 12651
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 10mOhm @ 11A, 20V 1543pF @ 25V 48nC @ 10V 30V 8-PowerTDFN (Kg)
- Delivery:
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In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Supplier Device Package | PQFN (3x3) |
| Packaging | Cut Tape (CT) |
| Series | HEXFET® |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.8W |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 20V |
| Vgs(th) (Max) @ Id | 2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1543pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 27ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | -11A |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -30V |
| Input Capacitance | 1.543nF |
| Recovery Time | 96 ns |
| Drain to Source Resistance | 14.6mOhm |
| Rds On Max | 10 mΩ |
| Nominal Vgs | -1.8 V |
| Height | 939.8μm |
| Length | 2.9972mm |
| Width | 2.9972mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
