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| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.2m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 19A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 9.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.9 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 19A |
| Threshold Voltage | 3.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0052Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 260A |
| Avalanche Energy Rating (Eas) | 360 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 950μm |
| Length | 6.15mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | FASTIRFET™, HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Base Part Number | IRFH7185 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.6W Ta 160W Tc |
| Element Configuration | Single |
Advanced processing techniques are used in Infineon's IR MOSFETTM technology to provide ultra-low on-resistance per silicon area. When the rapid switching speed and reliable device architecture of IR MOSFETTM devices are combined, the result is a highly efficient and reliable device that may be employed in a variety of applications.
Lower Losses in Conduction
Increased Density of Power
Boosted Reliability
Increased Density of Power
Compatibility with Multiple Vendors
Manufacturing is simpler.
Environmentally preferable
Enhanced Reliability
Primary Switch for Telecom DC-DC Power Supplies with a High Frequency of 48V/60V
Synchronous Rectifier on the Secondary Side
Active O-Ring and Hot Swap
Please send RFQ , we will respond immediately.