IRFH7185TRPBF

IRFH7185TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFH7185TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 8266
  • Description: IRFH7185TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.6V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 50V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 9.9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 3.6V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 360 mJ
Max Junction Temperature (Tj) 150°C
Height 950μm
Length 6.15mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series FASTIRFET™, HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number IRFH7185
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Ta 160W Tc
Element Configuration Single

IRFH7185TRPBF Description


Advanced processing techniques are used in Infineon's IR MOSFETTM technology to provide ultra-low on-resistance per silicon area. When the rapid switching speed and reliable device architecture of IR MOSFETTM devices are combined, the result is a highly efficient and reliable device that may be employed in a variety of applications.



IRFH7185TRPBF Features


  • Lower Losses in Conduction

  • Increased Density of Power

  • Boosted Reliability

  • Increased Density of Power

  • Compatibility with Multiple Vendors

  • Manufacturing is simpler.

  • Environmentally preferable

  • Enhanced Reliability



IRFH7185TRPBF Applications


  • Primary Switch for Telecom DC-DC Power Supplies with a High Frequency of 48V/60V

  • Synchronous Rectifier on the Secondary Side

  • Active O-Ring and Hot Swap


In Stock

Please send RFQ , we will respond immediately.