IRFH7107TR2PBF

MOSFET (Metal Oxide) N-Channel Digi-Reel® 8.5mOhm @ 45A, 10V 3110pF @ 25V 72nC @ 10V 75V 8-PowerTDFN


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFH7107TR2PBF
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 12463
  • Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 8.5mOhm @ 45A, 10V 3110pF @ 25V 72nC @ 10V 75V 8-PowerTDFN (Kg)

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Digi-Reel®
Series HEXFET®
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 9.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 75V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Input Capacitance 3.11nF
Recovery Time 42 ns
Drain to Source Resistance 8.5mOhm
Rds On Max 8.5 mΩ
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.