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IRFH5406TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5406TRPBF
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 1982
- Description: IRFH5406TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14.4m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1256pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 8.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.5 ns |
| Turn-Off Delay Time | 5.4 ns |
| Continuous Drain Current (ID) | 40A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 45 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 2 V |
| Height | 900μm |
| Length | 5.9944mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | IRFH5406TRPBF |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 14.4MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.6W Ta 46W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
IRFH5406TRPBF Description
STripFETTM F7 technology is used in these N-channel Power MOSFETs, which has an enhanced trench gate structure that minimizes internal capacitance and gate charge for faster and more efficient switching. Conduction loss will be reduced, switching performance will be improved, the dv/dt rate will be increased, and the avalanche energy will be increased with this technology.
IRFH5406TRPBF Features
RDSon is low (v 14.4 mQ)
Low PCB Thermal Resistance (2.7°C/W)
Rg was evaluated in its entirety.
Low-profile (less than 0.9 mm)
Pinout conforms to industry standards and is compatible with current surface mount techniques.
Compliant with RoHS There is no lead, bromide, or halogen in this product. MSL1 is an abbreviated version of MSL1. Oualification in Industry
IRFH5406TRPBF Applications
? Synchronous Rectification on the Secondary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
? Converting Boost
