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ContactIRFH5220TR2PBF
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 99.9mOhm @ 5.8A, 10V 1380pF @ 50V 30nC @ 10V 200V 8-VQFN Exposed Pad
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5220TR2PBF
- Package: 8-VQFN Exposed Pad
- Datasheet:
- Stock: 11001
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 99.9mOhm @ 5.8A, 10V 1380pF @ 50V 30nC @ 10V 200V 8-VQFN Exposed Pad (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad |
| Number of Pins | 8 |
| Supplier Device Package | PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 99.9MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 99.9mOhm @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A Ta 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 4.7ns |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 3.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Input Capacitance | 1.38nF |
| Recovery Time | 59 ns |
| Drain to Source Resistance | 99.9mOhm |
| Rds On Max | 99.9 mΩ |
| Nominal Vgs | 5 V |
| Height | 850μm |
| Length | 6mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
