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ContactIRFH5210TR2PBF
MOSFET N-CH 100V 10A 5X6 PQFN
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5210TR2PBF
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 8000
- Description: MOSFET N-CH 100V 10A 5X6 PQFN(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2570pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Rise Time | 9.7ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 6.5 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Input Capacitance | 2.57nF |
| Recovery Time | 44 ns |
| Drain to Source Resistance | 14.9mOhm |
| Rds On Max | 14.9 mΩ |
| Nominal Vgs | 2 V |
| Height | 838.2μm |
| Length | 5.9944mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 14.9MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
