IRFH5206TR2PBF

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6.7mOhm @ 50A, 10V 2490pF @ 25V 60nC @ 10V 60V 8-PowerVDFN


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFH5206TR2PBF
  • Package: 8-PowerVDFN
  • Datasheet: pdf
  • Stock: 4517
  • Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6.7mOhm @ 50A, 10V 2490pF @ 25V 60nC @ 10V 60V 8-PowerVDFN (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Turn On Delay Time 6.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 8.2 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 89A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 2.49nF
Recovery Time 39 ns
Drain to Source Resistance 6.7mOhm
Rds On Max 6.7 mΩ
Nominal Vgs 4 V
Height 838.2μm
Length 5.9944mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.