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ContactIRFH5020TRPBF
IRFH5020TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5020TRPBF
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7900
- Description: IRFH5020TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 55MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.6W Ta 8.3W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 7.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 5.1A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 43A |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 63A |
| Avalanche Energy Rating (Eas) | 320 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.05mm |
| Length | 6mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRFH5020TRPBF Description
The IRFH5020TRPBF creates a SO-8-sized footprint and 0.7 mm profile package with the lowest on-state resistance attainable by fusing the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging. The DirectFET package is compatible with the current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering procedures when application note AN-1035 outlining the manufacturing processes and methods is followed. Two-sided cooling made possible by the DirectFET package boosts thermal transmission in power systems and reduces thermal resistance by 80% over the previous best.
IRFH5020TRPBF Features
0.8°C/W Low Thermal Resistance to PCB
Complete Rq testing
Slim Profile (S 0.9 mm)
Standard Pinout for the Industry
Compatibility with Current Surface Mount Methods
Conforms to RoHS No Lead, Bromide, or Haloqen is present.
Industrial Qualification, MSL1
IRFH5020TRPBF Applications
? Rectification with secondary side synchronization
? DC motor inverters.
? Applications for DC-DC Brick
? Power converters
