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ContactIRFH5020TR2PBF
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 55mOhm @ 7.5A, 10V 2290pF @ 100V 54nC @ 10V 200V 8-PowerVDFN
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5020TR2PBF
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 6622
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 55mOhm @ 7.5A, 10V 2290pF @ 100V 54nC @ 10V 200V 8-PowerVDFN (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Series | HEXFET® |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 55MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 8.3W |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 7.7ns |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 43A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Input Capacitance | 2.29nF |
| Recovery Time | 69 ns |
| Drain to Source Resistance | 55mOhm |
| Rds On Max | 55 mΩ |
| Nominal Vgs | 5 V |
| Height | 838.2μm |
| Length | 5.9944mm |
| Width | 5mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
