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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.6W Ta 156W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 31m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Rise Time | 9.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 56A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 220A |
| Avalanche Energy Rating (Eas) | 230 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 900μm |
| Length | 6.1468mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The CoolMOSTM 7th generation platform from Infineon Technologies is a game-changing technology for high-voltage power MOSFETs based on the superjunction (SJ) principle. The 600V CoolMOSTM P6 series is replaced by the CoolMOSTM P7 series. Reduced ringing, superior body diode endurance against harsh commutation, and outstanding ESD performance combine the benefits of a fast switching SJ MOSFET with incredible ease of use.
RDSon is low (v 31 mQ)
Low PCB Thermal Resistance (vO8°C/W)
Rg was evaluated in its entirety.
(v09 mm) Low Profile
Standard Pinout in the Industry
Compatible with Current Surface Mounting Methodologies
Compliant with RoHS There is no lead, bromide, or halogen in this product.
In dustrial Qualificati on MSL1
? Synchronous Rectification on the Primary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
? Converting Boost
Please send RFQ , we will respond immediately.