IRFH5015TRPBF

IRFH5015TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFH5015TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 2504
  • Description: IRFH5015TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.6W Ta 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 10A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 9.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 230 mJ
Max Junction Temperature (Tj) 150°C
Height 900μm
Length 6.1468mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFH5015TRPBF Description


The CoolMOSTM 7th generation platform from Infineon Technologies is a game-changing technology for high-voltage power MOSFETs based on the superjunction (SJ) principle. The 600V CoolMOSTM P6 series is replaced by the CoolMOSTM P7 series. Reduced ringing, superior body diode endurance against harsh commutation, and outstanding ESD performance combine the benefits of a fast switching SJ MOSFET with incredible ease of use.



IRFH5015TRPBF Features


  • RDSon is low (v 31 mQ)

  • Low PCB Thermal Resistance (vO8°C/W)

  • Rg was evaluated in its entirety.

  • (v09 mm) Low Profile

  • Standard Pinout in the Industry

  • Compatible with Current Surface Mounting Methodologies

  • Compliant with RoHS There is no lead, bromide, or halogen in this product.

  • In dustrial Qualificati on MSL1



IRFH5015TRPBF Applications


? Synchronous Rectification on the Primary Side


? Inverters for DC Motors (Inverters for DC Motors)


? Applications for DC-DC Bricks


? Converting Boost


In Stock

Please send RFQ , we will respond immediately.