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ContactIRFH5015TR2PBF
IRFH5015TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5015TR2PBF
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 854
- Description: IRFH5015TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 31MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 9.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 34A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Rise Time | 9.7ns |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 56A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Input Capacitance | 2.3nF |
| Recovery Time | 78 ns |
| Drain to Source Resistance | 31mOhm |
| Rds On Max | 31 mΩ |
| Nominal Vgs | 5 V |
| Height | 990.6μm |
| Length | 6.1468mm |
| Width | 5.15mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
IRFH5015TR2PBF Description
IRFH5015TR2PBF is a 150v N-Channel HEXFET Power MOSFET. The Infineon IRFH5015TR2PBF can be applied in Primary Side Synchronous Rectification, Inverters for DC Motors, DC-DC Brick Applications, and Boost Converters due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRFH5015TR2PBF is in the PQFN-8 package with 3.6w power dissipation.
IRFH5015TR2PBF Features
Low RDSon (< 31 m2) for Lower Conduction Losses
Low Thermal Resistance to PCB (<0.8°C/W) for Increased Power Density
100% Rg tested for Increased Reliability
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout for Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques for Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide, and no Halogen for Environmentally Friendlier
MSL1, Industrial Qualification for Increased Reliability
IRFH5015TR2PBF Applications
Primary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
