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IRFH5006TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFH5006TRPBF
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 5499
- Description: IRFH5006TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 4.1MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.6W Ta 156W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 156W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.1m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4175pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Rise Time | 13ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Nominal Vgs | 2 V |
| Height | 990.6μm |
| Length | 6.1468mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRFH5006TRPBF Description
The IRFH5006TRPBF is a HEXFET? single N-channel Power MOSFET offering industry-standard pin-out for multi-vendor compatibility. The Infineon IRFH5006TRPBF is suitable for secondary-side synchronous rectification, DC-to-DC brick applications, and boost converters. It is compatible with existing surface-mount techniques. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRFH5006TRPBF is in the PQFN-8 package with 156W power dissipation.
IRFH5006TRPBF Features
Low RDS (ON) (<=4.1mR) results in low conduction losses
Low thermal resistance to PCB (<=0.8°C/W) enables better thermal dissipation
100% Rg tested for increased reliability
Low profile (<=0.9mm) results in increased power density
Halogen-free
Industrial qualification MSL-1 (increased reliability)
IRFH5006TRPBF Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Battery-powered applications
Power tools
DC motor drives
Light Electric Vehicles (LEV)
SMPS
