IRFH4209DTRPBF

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.1m Ω @ 50A, 10V ±20V 4620pF @ 13V 74nC @ 10V 25V 8-PowerTDFN


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFH4209DTRPBF
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 14179
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.1m Ω @ 50A, 10V ±20V 4620pF @ 13V 74nC @ 10V 25V 8-PowerTDFN (Kg)

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SPECIFICATIONS

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 13V
Current - Continuous Drain (Id) @ 25°C 44A Ta 260A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 260A
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series FASTIRFET™, HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 1.1Ohm
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 3.5W Ta 125W Tc

In Stock

Please send RFQ , we will respond immediately.