IRFD110PBF

IRFD110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRFD110PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: pdf
  • Stock: 3583
  • Description: IRFD110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 6.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 540m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 200 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 4.57mm
Length 5mm
Width 6.29mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 540mOhm
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDIP-T3
Qualification Status Not Qualified
Lead Pitch 2.54mm
Number of Elements 1
Row Spacing 7.62 mm
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single

IRFD110PBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 180pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.A device can conduct a maximum continuous current of [1A] according to its drain current.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. This device reduces its overall power consumption by using drive voltage (10V).

IRFD110PBF Features


a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
a threshold voltage of 4V

IRFD110PBF Applications


There are a lot of Vishay Siliconix IRFD110PBF applications of single MOSFETs transistors.

  • LCD/LED TV
  • Lighting, Server, Telecom and UPS.
  • Telecom 1 Sever Power Supplies
  • Solar Inverter
  • Motor control
  • General Purpose Interfacing Switch
  • Motor Drives and Uninterruptible Power Supples
  • Motor drives and Uninterruptible Power Supplies
  • Consumer Appliances
  • LCD/LED/ PDP TV Lighting

In Stock

Please send RFQ , we will respond immediately.