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MOSFET (Metal Oxide) N-Channel Tube 100mOhm @ 1.5A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V 4-DIP (0.300, 7.62mm)
- Manufacturer: Vishay Siliconix
- NO: 880-IRFD024PBF
- Package: 4-DIP (0.300, 7.62mm)
- Datasheet:
- Stock: 3313
- Description: MOSFET (Metal Oxide) N-Channel Tube 100mOhm @ 1.5A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V 4-DIP (0.300, 7.62mm) (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 100mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 2.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 58ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 58 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 2.5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 640pF |
| Recovery Time | 180 ns |
| Drain to Source Resistance | 100mOhm |
| Rds On Max | 100 mΩ |
| Height | 3.37mm |
| Length | 5mm |
| Width | 6.29mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
