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IRFB7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFB7530PBF
- Package: TO-220-3
- Datasheet:
- Stock: 9441
- Description: IRFB7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 375W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 52 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 13703pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 195A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 411nC @ 10V |
| Rise Time | 141ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 104 ns |
| Turn-Off Delay Time | 172 ns |
| Continuous Drain Current (ID) | 195A |
| Threshold Voltage | 3.7V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.002Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 760A |
| Avalanche Energy Rating (Eas) | 1025 mJ |
| Height | 16.51mm |
| Length | 10.67mm |
| Width | 4.83mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The IRFB7530PBF is a single N-channel HEXFET? Power MOSFET with enhanced gate, avalanche, and dynamic dV/dt robustness. It can be used in battery-powered circuits, synchronous rectifier applications, O-ring and redundant power switches, as well as half-bridge and full-bridge topologies.
Features
● N-channel HEXFET? Power MOSFET
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free, RoHS Compliant
Applications
● Synchronous rectifier applications
● Resonant mode power supplies
● OR-ing and redundant power switches
● DC/DC and AC/DC converters
● DC/AC Inverters
● Brushed Motor drive applications
● BLDC Motor drive applications
● Battery powered circuits
● Half-bridge and full-bridge topologies
